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60F30A MOSFET 60F30 Transistor
Description
- Manufacturer country: China
- Transistor type: IGBT Mosfet
- Model: 60F30A
- Body material: Plastic Steel
- Maximum allowable collector-emitter voltage: 300 V
- Maximum allowable gate-source voltage: 30 in
- Maximum permissible collector current: 60 A
- Maximum power dissipation: 260.4 Watt
- Switch-on time: 0.05 μs
- Shutdown time: 0.11 μs
- Mounting type: Plug-in
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