70N10 MOSFET Transistor Original

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Description
  • FQP70N10 N-Channel QFET® MOSFET November 2013 100 V, 57 A, 23 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
  • This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
  • These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
  • 57A,100V,RDS(on) =23mΩ(Max.)@VGS =10V, ID = 28.5 A
  • Low Gate Charge (Typ. 85 nC)
  • Low Crss (Typ. 150 pF)
  • 100% Avalanche Tested
  • 175°C Maximum Junction Temperature Rating
Additional information
Weight 0.5 kg
Dimensions 21 × 18 × 5 cm
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