55N10 Power Transistor Mosfet IC By Licate

Specification

• 55N10 is a 199V 55A N-channel enhancement mode power field effect transistor.
• This device is specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode.
• These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching Dc to DC converters, and DC motor control.
• Features Low gate charge Fast switching 100% avalanche tested
• Drain-source voltage: 100V
• Gate-source voltage: ±25V
• Gate threshold voltage: 2V to 4V
• Continuous drain current: At 25℃: 55A At 100℃: 38.9A
• Pulsed drain current: 220A
• Avalanche current: 55A
• Drain-source diode forward voltage: 1.5V
• Operating and storage temperature: -55℃ to 175℃