- FQP70N10 N-Channel QFET® MOSFET November 2013 100 V, 57 A, 23 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
- This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
- 57A,100V,RDS(on) =23mΩ(Max.)@VGS =10V, ID = 28.5 A
- Low Gate Charge (Typ. 85 nC)
- Low Crss (Typ. 150 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
Description
Additional information
Weight | 0.5 kg |
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Dimensions | 21 × 18 × 5 cm |
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