- Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies.
- IGBT transistors have the advantage of combining many of the characteristics of MOSFETs and bipolar transistors, giving the high voltage and current handling capabilities of bipolar transistors with the high-speed switching and low gate current performance of power MOSFETs.
Features
- 600V Field Stop Trench Technology
- High-Speed Switching
- Low Conduction Loss
- Positive Temperature Coefficient
- Easy Parallel Operation
- RoHS Compliant
- JEDEC Qualification
SPECIFICATIONS
Model | TGAN60N60F2DS |
Brand | TRINO |
Type of IGBT Channel | N-Channel |
Maximum Power Dissipation @25°C | 347W |
Max. Collector-Emitter Voltage | 600V |
Collector-Emitter Saturation Voltage | 1.8V DC |
Max. Gate Emitter Voltage | 20V DC |
Max. Collector Current | 120A |
Max. Junction Temperature | 150°C |
Rise Time | 125ns |
Max. Collector Capacity | 170pF |
Package | TO-3PN |
Country of Origin | China |
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