TGAN60N60F2DS 600V Field Stop Trench IGBT Power Transistor By licate

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Description
  • Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies.
  • IGBT transistors have the advantage of combining many of the characteristics of MOSFETs and bipolar transistors, giving the high voltage and current handling capabilities of bipolar transistors with the high-speed switching and low gate current performance of power MOSFETs.

Features

  • 600V Field Stop Trench Technology
  • High-Speed Switching
  • Low Conduction Loss
  • Positive Temperature Coefficient
  • Easy Parallel Operation
  • RoHS Compliant
  • JEDEC Qualification

Datasheet

SPECIFICATIONS
ModelTGAN60N60F2DS
BrandTRINO
Type of IGBT ChannelN-Channel
Maximum Power Dissipation @25°C347W
Max. Collector-Emitter Voltage600V
Collector-Emitter Saturation Voltage1.8V DC
Max. Gate Emitter  Voltage20V DC
Max. Collector Current120A
Max. Junction Temperature150°C
Rise Time125ns
Max. Collector Capacity170pF
PackageTO-3PN
Country of OriginChina
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